TDS2201P

Final Datasheet

Rev 2.1

Revision Date

12/14/22

www.semtech.com

1 of 9

Semtech

Proprietary & Confidential

TDS2201P

Transient Diverting Suppressor

1-Line, 22V EOS Protection

Features

• High ESD withstand Voltage: +/-8kV (Contact) and

+/-30kV (Air) per IEC 61000-4-2

• High peak pulse current capability: 16A (tp = 8/20μs),

1kV (tp = 1.2/50μs, R

S = 42Ω ) per IEC 61000-4-5

• Protects one I/O or power line

• Low clamping voltage: 28V Maximum at I

PP = 16A (tp

= 8/20μs)

• Working voltage: 22V

• Solid-state technology

Mechanical Characteristics

• Package: DFN 1.0x0.6x0.25mm 2-Lead

• Pb-free, Halogen Free, RoHS/WEEE Compliant

• Molding compound flammability rating: UL 94V-0

• Lead Finish: Pb-free

• Marking: Marking code

• Packaging: Tape and Reel

Applications

• USB Type-C

• VBUS Lines

• Cellular Handsets & Accessories

• Notebooks and Tablets

• Storage Devices

• IoT Devices

Description

Transient Diverting Suppressors(TDS) are designed

to provide high energy EOS protection with superior

clamping and temperature characteristics when

compared to standard TVS devices. The device uses a

surge rated FET as the main protection element. During

an EOS event, transient voltage increases beyond the

rated breakdown voltage of the device. The FET in turn

switches on and conducts transient current to ground.

The TDS clamping voltage is nearly constant across the

rated peak pulse current range due to the extremely low

ON Resistance of the FET. Lower clamping voltage at

maximum peak pulse current makes them more suitable

for protecting today’s sensitive IC’s, when compared to

standard TVS diodes.

TDS2201P is designed to work on voltage bus or data

lines with an operating voltage as high as 22V. It is rated

for a high-energy transient current up to 16A (tp =

8/20us) and may be used to meet the common industrial

voltage surge standard of +/-1kV per IEC 61000-4-5 (R

S =

42 Ohms, C

S= 0.5uF).

TDS2201P is in a small DFN 1.0x0.6x0.25mm 2-Lead

and represents significant board space savings over

traditional SMAJ and SMBJ packaged devices.

0.25

0.6

1.00

Shunt

FET

Input

(To Protected Bus)

Gnd

Trigger

Circuit

Drive Circuit

Package Dimension (mm)

Functional Diagram

PROTECTION PRODUCTS