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IRLMS2002PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRLMS2002PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.5 ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.2 A IDM Pulsed Drain Current 20 PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3 Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 1/18/05 Parameter Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 IRLMS2002PbF HEXFET® Power MOSFET These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 ™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. VDSS = 20V RDS(on) = 0.030Ω Description l Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l 2.5V Rated l Lead-Free Top View 1 2 D G A D D D S 3 4 5 6 Micro6 ™ PD- 95675 |
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