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SVC704 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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SVC704 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 3 page ![]() SVC704 No.8997-1/3 Features • High capacitance ratio (VR=1.0 to 7.0V). • Small-sized package. • Low series resistance. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Reverse Voltage VR 16 V Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Breakdown Voltage V(BR)R IR=10µA16 V Reverse Current IR VR=10V 50 nA Interterminal Capacitance C1.0V VR=1.0V, f=1MHz 26.0 30.0 pF C7.0V VR=7.0V, f=1MHz 3.4 4.6 pF Series Resistance rs VR=1.0V, f=470MHz 0.8 Ω Capacitance Ratio CR C1.0V / C7.0V 6.0 Marking : V5 Ordering number : EN8997 82306 / 61506VC MS IM TB-00002374 SVC704 Silicon Diffused Junction Type Varactor Diode Varactor Diode for AFC, VCO SANYO Semiconductors DATA SHEET Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN |
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