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VEC2603 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # VEC2603
Description  N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
PDF  6 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

VEC2603 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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VEC2603
No. A0934-2/6
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Ω
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
Ω
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Ω
Input Capacitance
Ciss
VDS=10V, f=1MHz
7.0
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
5.9
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
2.3
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
See specified Test Circuit.
65
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
155
ns
Fall Time
tf
See specified Test Circuit.
120
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=150mA
1.58
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=150mA
0.26
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=150mA
0.31
nC
Diode Forward Voltage
VSD
IS=150mA, VGS=0V
0.87
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--12
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--12V, VGS=0V
--10
µA
Gate-to-Source Leakage Current
IGSS
VGS=±6.4V, VDS=0V
±10
µA
Cutoff Voltage
VGS(off)
VDS=--6V, ID=--1mA
--0.3
--1.0
V
Forward Transfer Admittance
yfs
VDS=--6V, ID=--2A
4.5
7.6
S
RDS(on)1
ID=--2A, VGS=--4.5V
40
53
mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--1A, VGS=--2.5V
57
80
mΩ
RDS(on)3
ID=--0.3A, VGS=--1.8V
78
112
mΩ
Input Capacitance
Ciss
VDS=--6V, f=1MHz
940
pF
Output Capacitance
Coss
VDS=--6V, f=1MHz
230
pF
Reverse Transfer Capacitance
Crss
VDS=--6V, f=1MHz
180
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
14
ns
Rise Time
tr
See specified Test Circuit.
120
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
97
ns
Fall Time
tf
See specified Test Circuit.
110
ns
Total Gate Charge
Qg
VDS=--6V, VGS=--4.5V, ID=--4A
11
nC
Gate-to-Source Charge
Qgs
VDS=--6V, VGS=--4.5V, ID=--4A
1.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--6V, VGS=--4.5V, ID=--4A
2.8
nC
Diode Forward Voltage
VSD
IS=--4A, VGS=0V
--0.85
--1.5
V
Package Dimensions
Electrical Connection
unit : mm (typ)
7012-009
2.9
0.65
0.3
123
4
87
6 5
0.15
1 : Source1
2 : Gate1
3 : Drain2
4 : Drain2
5 : Source2
6 : Gate2
7 : Drain1
8 : Drain1
SANYO : VEC8
87
6
5
123
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Drain2
5 : Source2
6 : Gate2
7 : Drain1
8 : Drain1
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