BDV65C datasheet(2/6 Pages) POINN

2 / 6 page

BDV65, BDV65A, BDV65B, BDV65C

NPN SILICON POWER DARLINGTONS

JUNE 1993 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = 30 mA

IB = 0

(see Note 4)

BDV65

BDV65A

BDV65B

BDV65C

100

120

ICEO

Collector-emitter

cut-off current

VCB = 30 V

VCB = 40 V

VCB = 50 V

VCB = 60 V

IB = 0

BDV65

BDV65A

BDV65B

BDV65C

ICBO

Collector cut-off

current

VCB = 60 V

VCB = 80 V

VCB = 100 V

VCB = 120 V

VCB = 30 V

VCB = 40 V

VCB = 50 V

VCB = 60 V

IE = 0

TC = 150°C

BDV65

BDV65A

BDV65B

BDV65C

BDV65

BDV65A

BDV65B

BDV65C

0.4

IEBO

Emitter cut-off

current

VEB =

5 V

IC = 0

hFE

Forward current

transfer ratio

VCE =

4 V

IC = 5 A

(see Notes 4 and 5)

1000

VCE(sat)

Collector-emitter

saturation voltage

IB =

20 mA

IC = 5 A

(see Notes 4 and 5)

VBE

Base-emitter

voltage

VCE =

4 V

IC = 5 A

(see Notes 4 and 5)

2.5

VEC

Parallel diode

forward voltage

IE =

10 A

IB = 0

(see Notes 4 and 5)

3.5

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

°C/W

RθJA

Junction to free air thermal resistance

35.7

°C/W

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