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AS7C1028 Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation

Part # AS7C1028
Description  5V 256K X 4 CMOS SRAM (Common I/O)
PDF  8 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C1028 Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation

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AS7C1028
12/5/06; V.1.0
Alliance Memory
P. 6 of 8
®
AC test conditions
Notes:
1
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2
This parameter is sampled, but not 100% tested.
3
For test conditions, see AC Test Conditions, Figures A, B, C.
4
These parameters are specified with CL = 5pF, as in Figures B or C. Transition is measured
±200mV from steady-state voltage.
5
This parameter is guaranteed, but not tested.
6
WE is High for read cycle.
7
CE and OE are Low for read cycle.
8
Address valid prior to or coincident with CE transition Low.
9
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle.
11
All write cycle timings are referenced from the last valid address to the first transitioning address.
12 CE1 and CE2 have identical timing.
13 C=30pF, except on High Z and Low Z parameters, where C=5pF.
350
Ω
C(13)
320
Ω
Dout
GND
VCC
168
Ω
Dout
+1.72V (5V)
Figure C: Output load
255
Ω
C(13)
480
Ω
Dout
GND
+5V
Figure B: Output load
Thevenin equivalent
- Output load: see Figure B or Figure C.
- Input pulse level: GND to VCC. See Figure A.
- Input rise and fall times: 3 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
10%
90%
10%
90%
GND
VCC
Figure A: Input pulse
3 ns



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