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2N5684 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5684 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Silicon PNP Power Transistors 2N5684 www.iscsemi.com 1 DESCRIPTION · High DC Current Gain-hFE=15~60@IC = -25A · Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.584 K/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 A IB Base Current-Continuous -15 A PC Collector Power Dissipation @TC=25℃ -300 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
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