MBR10200 datasheet(1/2 Pages) ISC

Part #	MBR10200

Description	Schottky Rectifier Diode

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Schottky Rectifier Diode

MBR10200

www.iscsemi.com

1

FEATURES

·

Metal silicon junction，majority carrier conduction

·

Low Power Loss/High Efficiency

·

High current capability，low forward voltage drop

·

High surge capability

·

Guardring for overvoltage protection

·

High temperature soldering guaranteed

APPLICATIONS

·

Designed for low-voltage,high frequency inverters，free wheeling

and polarrity protection applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

200

V

IF(AV)

Average Rectified Forward Current

(Rated VR)

10

A

IFRM

Peak Repetitive Forward Current

(Rated VR,Square Wave,20kHz) TC= 135℃

20

A

IFSM

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions half-

wave, single phase, 60Hz)

150

A

IRRM

Peak Repetitive Reverse Surge Current

(20μs, 1.0kHz)

0.5

A

TJ

Junction Temperature

-65~150

℃

Tstg

Storage Temperature Range

-65~175

℃

dv/dt

Voltage Rate of Change (Rated VR)

10,000

V/μs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.0

℃

/W

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MBR10200 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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