BUT11

NPN SILICON POWER TRANSISTOR

PRODUCT

INFORMATION

1

MAY 1989 - REVISED MARCH 1997

Copyright © 1997, Power Innovations Limited, UK

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

q

Rugged Triple-Diffused Planar Construction

q

100 W at 25°C Case Temperature

q

5 A Continuous Collector Current

B

C

E

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

1

2

3

absolute maximum ratings

at 25°C case temperature (unless otherwise noted)

NOTE

RATING

SYMBOL

VALUE

UNIT

850

V

850

V

400

V

Emitter-base voltage

10

V

Continuous collector current

5

A

Peak collector current (see Note 1)

10

A

Continuous device dissipation at (or below) 25°C case temperature

100

W

Operating junction temperature range

-65 to +150

°C

Storage temperature range

-65 to +150

°C