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BUV47 Datasheet(PDF) 2 Page - Power Innovations Ltd

Part # BUV47
Description  NPN SILICON POWER TRANSISTORS
PDF  8 Pages
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Manufacturer  POINN [Power Innovations Ltd]
Direct Link  http://www.bourns.com
Logo POINN - Power Innovations Ltd

BUV47 Datasheet(HTML) 2 Page - Power Innovations Ltd

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BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(sus)
Collector-emitter
sustaining voltage
IC = 200 mA
L = 25 mH
(see Note 2)
BUV47
BUV47A
400
450
V
V(BR)EBO
Base-emitter
breakdown voltage
IE =
50 mA
IC = 0
(see Note 3)
7
30
V
ICES
Collector-emitter
cut-off current
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
TC = 125°C
TC = 125°C
BUV47
BUV47A
BUV47
BUV47A
0.15
0.15
1.5
1.5
mA
ICER
Collector-emitter
cut-off current
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
RBE = 10 Ω
RBE = 10 Ω
RBE = 10 Ω
RBE = 10 Ω
TC = 125°C
TC = 125°C
BUV47
BUV47A
BUV47
BUV47A
0.4
0.4
3.0
3.0
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC = 0
1
mA
VCE(sat)
Collector-emitter
saturation voltage
IB =
1 A
IB =
2.5 A
IC =
5 A
IC =
8 A
(see Notes 3 and 4)
1.5
3.0
V
VBE(sat)
Base-emitter
saturation voltage
IB =
1 A
IC =
5 A
(see Notes 3 and 4)
1.6
V
ft
Current gain
bandwidth product
VCE =
10 V
IC = 0.5 A
f =
1 MHz
8
MHz
Cob
Output capacitance
VCB =
20 V
IC = 0
f = 0.1 MHz
105
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
†
MIN
TYP
MAX
UNIT
ton
Turn on time
IC = 5 A
VCC = 150 V
IB(on) = 1 A
(see Figures 1 and 2)
IB(off) = -1 A
1.0
µs
ts
Storage time
3.0
µs
tf
Fall time
0.8
µs
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
†
MIN
TYP
MAX
UNIT
tsv
Voltage storage time
IC = 5 A
TC = 100°C
IB(on) = 1 A
(see Figures 3 and 4)
VBE(off) = -5 V
4.0
µs
tfi
Current fall time
0.4
µs



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