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MBR745 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # MBR745
Description  7.5 AMPS. Schottky Barrier Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBR745 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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Dimensions in inches and (millimeters)
Version: A06
MBR735 - MBR7150
7.5 AMPS. Schottky Barrier Rectifiers
TO-220AC
.412(10.5)
MAX
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.27(6.86)
.23(5.84)
.11(2.79)
.10(2.54)
.025(0.64)
.014(0.35)
.154(3.91)
.148(3.74)
DIA
PIN1
2
.113(2.87)
.103(2.62)
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.594(15.1)
.587(14.9)
.56(14.22)
.53(13.46)
PIN 1
PIN 2
CASE
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBR
735
MBR
745
MBR
750
MBR
760
MBR
790
MBR
7100
MBR
7150
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS Voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90
100
150
V
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
7.5
A
Peak Repetitive Forward Current (Square Wave, 20KHz) at
Tc=105oC
IFRM
15.0
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at (Note 2)
IF=7.5A,Tc=25℃
IF=7.5A,Tc=125℃
IF=15A,Tc=25℃
IF=15A,Tc=125℃
VF
0.57
0.84
0.72
0.75
0.65
0.92
0.82
0.95
0..92
V
Maximum Instantaneous Reverse Current @ Tc =25 oC
at Rated DC Blocking Voltage (Note 1)
@ Tc=125 oC
IR
0.1
15.0
0.1
10
0.1
5.0
mA
mA
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/uS
Typical Junction Capactance
Cj
360
280
200
160
pF
Maximum Thermal Resistance, (Note 3)
RθJC
RθJA
5.0
15.0
oC/W
Operating Junction Temperature Range
TJ
-65 to +150
oC
Storage Temperature Range
TSTG
-65 to +175
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated.


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