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MBR10150CT Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBR10150CT Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 90 - MBR10100CT THRU MBR10200CT 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 100 to 200 Volts Current 10.0 Amperes Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260 oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: JEDEC TO-220 molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams TO-220 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MBR 10100CT MBR 10150CT MBR 10200CT Units Maximum Recurrent Peak Reverse Voltage VRRM 100 150 200 V Maximum RMS Voltage VRMS 70 105 140 V Maximum DC Blocking Voltage VDC 100 150 200 V Maximum Average Forward Rectified Current at Tc=125 OC I(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=125 oC IFRM 32.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 120 A Peak Repetitive Reverse Surge Current (Note 1) IRRM 0.5 A Maximum Instantaneous Forward Voltage at: (Note 2) IF=5A, TC=25 oC IF=5A, TC=125 oC VF 0.85 0.75 0.88 0.78 0.99 0.87 V Maximum Instantaneous Reverse Current@ Tc =25 ℃ at Rated DC Blocking Voltage (Note 2) IR 0.008 0.2 mA Voltage Rate of Change (Rated VR) dV/dt 10,000 V/uS M aximum Typical Thermal Resistance (Note 3) R θJc 1.5 ℃/W Operating Junction Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +175 ℃ Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. |
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