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TIC201 SERIES

SILICON TRIACS

JANUARY 1977 - REVISED MARCH 1997

PRODUCT

INFORMATION

† All voltages are with respect to Main Terminal 1.

NOTES: 6. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from

the current carrying contacts are located within 3.2 mm from the device body.

7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:

RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.

VTM

Peak on-state voltage

ITM = ±3.5 A

IG = 50 mA

(see Note 6)

±1.9

Holding current

Vsupply = +12 V†

Vsupply = -12 V†

IG = 0

Init’ ITM = 100 mA

Init’ ITM = - 100 mA

-30

Latching current

Vsupply = +12 V†

Vsupply = -12 V†

(see Note 7)

-40

dv/dt

Critical rate of rise of

off-state voltage

VDRM = Rated VDRM

IG = 0

TC = 110°C

±50

V/µs

dv/dt(c)

Critical rise of

commutation voltage

VDRM = Rated VDRM

ITRM = ±3.5 A

TC = 85°C

±2

V/µs

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

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