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MBRF2050 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # MBRF2050
Description  Isolated 20.0 AMPS. Schottky Barrier Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBRF2050 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  MBRF2050 Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd MBRF2050 Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
Version: A06
MBRF2035 - MBRF20150
Isolated 20.0 AMPS. Schottky Barrier Rectifiers
ITO-220AC
.071(1.8)
MAX
.161(4.1)
.146(3.7)
.118(3.00)
.124(3.16)
.185(4.7)
.173(4.4)
.272(6.9)
.248(6.3)
.063(1.6)
MAX
.100(2.55)
.543(13.8)
.512(13.2)
.100(2.55)
.110(2.8)
.098(2.5)
.606(15.5)
.583(14.8)
.112(2.85)
.100(2.55)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.043(1.1)
.020(0.5)
.035(0.9)
.055(1.4)
.030(0.76)
.020(0.50)
2
PIN 1
PIN 2
Case Positive
CASE
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBRF
2035
MBRF
2045
MBRF
2050
MBRF
2060
MBRF
2090
MBRF
20100
MBRF
20150
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS Voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90
100
150
V
Maximum Average Forward Rectified Current
at Tc=125
OC
I(AV)
20
A
Peak Repetitive Forward Current (Rated VR, Square
Wave, 20KHz) at Tc=125
oC
IFRM
40
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=20A, TC=25
oC
IF=20A, TC=125
oC
VF
0.75
0.65
0.82
0.72
0.95
0.87
1.02
0.98
V
Maximum Instantaneous Reverse Current
@ Tc =25
oC at Rated DC Blocking Voltage (Note2)
@ Tc=125
oC
IR
0.2
15
0.2
10
0.1
5.0
mA
mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Typical Junction Capacitance
Cj
560
420
pF
Maximum Typical Thermal Resistance(Note 3)
RθJC
3.0
oC/W
Operating Junction Temperature Range
TJ
-65 to +150
oC
Storage Temperature Range
T
STG
-65 to +175
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.


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