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MBRF2545CT Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # MBRF2545CT
Description  Isolation 25.0 AMPS. Schottky Barrier Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBRF2545CT Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
VRRM
35
45
50
60
90
100
150
V
VRMS
24
31
35
42
63
70
105
V
VDC
35
45
50
60
90
100
150
V
IF(AV)
A
0.95
0.92
1.02
0.98
5
dV/dt
V/μs
TJ
OC
TSTG
OC
Document Number: DS_D1310013
Version: J13
MBRF2535CT thru MBRF25150CT
Taiwan Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBRF
2535
CT
MBRF
2545
CT
MBRF
2550
CT
MBRF
2560
CT
MBRF
2590
CT
A
MBRF
25100
CT
MBRF
25150
CT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
0.65
0.75
0.82
-
0.92
Maximum average forward rectified current
25
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
IR
mA
15
10
-0.75
Maximum instantaneous forward voltage (Note 1)
IF=12.5A, TJ=25℃
IF=12.5A, TJ=125℃
IF=25A, TJ=25℃
IF=25A, TJ=125℃
VF
0.85
Note 1: Pulse test with PW=300μs, 1% duty cycle
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
25
A
Operating junction temperature range
- 55 to +150
Storage temperature range
- 55 to +150
Typical thermal resistance
RθjC
RθjA
1
8
Voltage rate of change (Rated VR)
10000
-0.88
0.73
OC/W
20.1
7.5
V
-


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