Electronic Components Datasheet Search
  English  ▼

X  

TIC206N Datasheet(PDF) 1 Page - Power Innovations Ltd

Part # TIC206N
Description  SILICON TRIACS
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  POINN [Power Innovations Ltd]
Direct Link  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIC206N Datasheet(HTML) 1 Page - Power Innovations Ltd

  TIC206N Datasheet HTML 1Page - Power Innovations Ltd TIC206N Datasheet HTML 2Page - Power Innovations Ltd TIC206N Datasheet HTML 3Page - Power Innovations Ltd TIC206N Datasheet HTML 4Page - Power Innovations Ltd TIC206N Datasheet HTML 5Page - Power Innovations Ltd  
Zoom Inzoom in Zoom Outzoom out
 1 / 5 page
background image
TIC206 SERIES
SILICON TRIACS
PRODUCT
INFORMATION
1
DECEMBER 1971 - REVISED MARCH 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Sensitive Gate Triacs
q
4 A RMS
q
Glass Passivated Wafer
q
400 V to 800 V Off-State Voltage
q
Max IGT of 5 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 160 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC206D
TIC206M
TIC206S
TIC206N
VDRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
IT(RMS)
4
A
Peak on-state surge current full-sine-wave (see Note 3)
ITSM
25
A
Peak on-state surge current half-sine-wave (see Note 4)
ITSM
30
A
Peak gate current
IGM
±0.2
A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
≤ 200 µs)
PGM
1.3
W
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
PG(AV)
0.3
W
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
Lead temperature 1.6 mm from case for 10 seconds
TL
230
°C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDRM
Repetitive peak
off-state current
VD = rated VDRM
IG = 0
TC = 110°C
±1
mA
IGTM
Peak gate trigger
current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
0.5
-1.5
-2
3.6
5
-5
-5
10
mA
VGTM
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
0.7
-0.7
-0.8
0.8
2
-2
-2
2
V
† All voltages are with respect to Main Terminal 1.


Similar Part No. - TIC206N

ManufacturerPart #DatasheetDescription
logo
Comset Semiconductor
TIC206N COMSET-TIC206N Datasheet
208Kb / 3P
SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC206N COMSET-TIC206N Datasheet
164Kb / 4P
SILICON BIDIRECTIONAL TRIODE THYRISTOR
logo
New Jersey Semi-Conduct...
TIC206N NJSEMI-TIC206N Datasheet
112Kb / 2P
SILICON TRIACS
More results

Similar Description - TIC206N

ManufacturerPart #DatasheetDescription
logo
Power Innovations Ltd
TIC201 POINN-TIC201 Datasheet
67Kb / 4P
SILICON TRIACS
TIC225 POINN-TIC225 Datasheet
150Kb / 6P
SILICON TRIACS
TIC246 POINN-TIC246 Datasheet
105Kb / 5P
SILICON TRIACS
TIC263 POINN-TIC263 Datasheet
103Kb / 5P
SILICON TRIACS
TICP206 POINN-TICP206 Datasheet
127Kb / 7P
SILICON TRIACS
logo
Texas Instruments
TIC216 TI-TIC216 Datasheet
104Kb / 3P
SILICON TRIACS
logo
Comset Semiconductor
TIC216A COMSET-TIC216A_12 Datasheet
163Kb / 3P
SILICON TRIACS
logo
New Jersey Semi-Conduct...
TIC206 NJSEMI-TIC206 Datasheet
112Kb / 2P
SILICON TRIACS
logo
Bourns Electronic Solut...
TIC236D BOURNS-TIC236D Datasheet
141Kb / 3P
SILICON TRIACS
TIC246 BOURNS-TIC246 Datasheet
141Kb / 3P
SILICON TRIACS
More results


Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com