| Electronic Components Datasheet Search |
|
BAV16WS Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
|
|
|||||||||||||||||||||||||||||
BAV16WS Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
|
1 / 2 page ![]() - 824 - 0.016(0.4) 0.008(0.2) 0.051(1.3) 0.047(1.2) 0.006(0.15) 0.002(0.05) 0.035(0.9) 0.031(0.8) 1N 4448W S / B A V 16W S Fast S w itching S urface M ount D iode V oltage R ange 75 V olts 200m W atts P ow er D issipation Features Fast sw itching speed S urface m ount package ideally suited for autom atic insertion For general purpose sw itching applications H igh conductance A lso available in lead free version M echanical D ata C ase: S O D -323F, M olded plastic P lastic M aterial – U L Flam m ability C lassification R ating 94V -0 Term inals: S olderable per M IIL-S TD -202, M ethod 208 P olarity: C athode B and M oisture sensitivity: Level 1 per J-S TD -020A M arking: T4, T6 W eight: 0.004 gram (approx. ) S O D -323F D im ensions in inch es and (m illim eters) M axim um R atings and E lectrical C haracteristics R ating at 25 ℃ ambient temperature unless otherwise specified. M axim u m R atings Type N um ber Sym bol Value U nits N on-R epetitive P eak R everse V oltage V RM 100 V P eak R epetitive R everse V oltage W orking P eak R everse V oltage D C B locking V oltage V RRM V RW M V R 75 V R M S R everse V oltage V R(RM S) 53 V Forw ard C ontinuous C urrent (N ote 1) IFM 300 m A A verage R ectifier O utput C urrent (N ote 1) Io 150 m A N on-R epetitive P eak F orw ard S urge C urrent @ t=1.0uS @ t=1.0S IFSM 2.0 1.0 A P ow er D issipation (N ote 1) P d 200 m W Therm al R esistance Junction to A m bient A ir (N ote 1) R θ JA 625 O C/W O perating and S torage Tem perature R ange TJ, TSTG -65 to + 150 O C E lectrical C haracteristics Type N um ber S ym bol Min Max Units R everse B reakdow n V oltage IR =1.0uA V (BR)R 75 V Forw ard V oltage IF=1.0m A IF= 10m A IF =50m A IF=150m A V F - 0.715 0.855 1.0 1.25 V P eak R everse C urrent V R =75V V R =75V , Tj=150 ℃ V R =25V , T J=150 ℃ V R =20V IR - 1.0 50 30 25 uA nA Junction C apacitance V R =0, f=1.0M H z Cj - 2.0 pF R everse R ecovery Tim e (N ote 2) trr - 4.0 nS N otes: 1. V alid P rovided that Term inals are K ept at A m bient Tem perature. 2. R everse R ecovery Test C onditions: IF=IR =10m A , Irr=0.1 x IR, R L=100 Ω. |
Similar Part No. - BAV16WS |
|
Similar Description - BAV16WS |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |