TIP110 datasheet(2/6 Pages) POINN

2 / 6 page

TIP110, TIP111, TIP112

NPN SILICON POWER DARLINGTONS

DECEMBER 1971 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = 30 mA

(see Note 5)

IB = 0

TIP110

TIP111

TIP112

100

ICEO

Collector-emitter

cut-off current

VCE = 30 V

VCE = 40 V

VCE = 50 V

IB = 0

TIP110

TIP111

TIP112

ICBO

Collector cut-off

current

VCB = 60 V

VCB = 80 V

VCB = 100 V

IE = 0

TIP110

TIP111

TIP112

IEBO

Emitter cut-off

current

VEB =

5 V

IC = 0

hFE

Forward current

transfer ratio

VCE =

4 V

VCE =

4 V

IC = 1 A

IC = 2 A

(see Notes 5 and 6)

1000

500

VCE(sat)

Collector-emitter

saturation voltage

IB =

8 mA

IC = 2 A

(see Notes 5 and 6)

2.5

VBE

Base-emitter

voltage

VCE =

4 V

IC = 2 A

(see Notes 5 and 6)

2.8

VEC

Parallel diode

forward voltage

IE =

4 A

IB = 0

(see Notes 5 and 6)

3.5

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

†

MIN

TYP

MAX

UNIT

ton

Turn-on time

IC = 2 A

VBE(off) = -5 V

IB(on) = 8 mA

RL = 15 Ω

IB(off) = -8 mA

tp = 20 µs, dc ≤ 2%

2.6

µs

toff

Turn-off time

4.5

µs

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