TIP3055

NPN SILICON POWER TRANSISTOR

PRODUCT

INFORMATION

1

DECEMBER 1970 - REVISED MARCH 1997

Copyright © 1997, Power Innovations Limited, UK

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

q

Designed for Complementary Use with the

TIP2955 Series

q

90 W at 25°C Case Temperature

q

15 A Continuous Collector Current

q

Customer-Specified Selections Available

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAA

B

C

E

1

2

3

absolute maximum ratings

at 25°C case temperature (unless otherwise noted)

2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

RATING

SYMBOL

VALUE

UNIT

100

V

70

V

Emitter-base voltage

7

V

Continuous collector current

15

A

Continuous base current

7

A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

90

W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

3.5

W

Unclamped inductive load energy (see Note 4)

2

62.5

mJ

Operating junction temperature range

-65 to +150

°C

Storage temperature range

-65 to +150

°C

Lead temperature 3.2 mm from case for 10 seconds

260

°C