- 846 -

0.020(0.51)

0.015(0.37)

0.055(1.40)

0.047(1.19)

0.098(2.50)

0.083(2.10)

0.024(0.61)

0.018(0.45)

0.007(0.178)

0.003(0.076)

0.024(0.61)

0.018(0.45)

0.080(2.05)

0.070(1.78)

0.041(1.05)

0.047(0.89)

0.120(3.05)

0.104(2.65)

0.006(0.15)

0.001(0.013)

0.043(1.10)

0.035(0.89)

MMBD7000

Dual Surface Mount Switching Diode

Voltage Range

75 Volts

350m Watts Power Dissipation

Features

Fast switching speed

Surface mount package ideally suited for

automatic insertion

For general purpose switching applications

High conductance

Mechanical Data

Case: SOT-23, Molded plastic

Terminals: Solderable per MIIL-STD-202,

Method 208

Polarity: See diagram

Marking: KJH

Weight: 0.008 gram (approx.

)

SOT-23

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

℃ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

MMBD7000

Units

Non-Repetitive Peak Reverse Voltage

VRM

100

V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

75

V

RMS Reverse Voltage

VR(RMS)

53

V

Forward Continuous Current (Note 1)

IFM

300

mA

Average Rectifier Output Current (Note 1)

Io

150

mA

Non-Repetitive Peak Forward Surge Current

@ t=1.0uS

@ t=1.0S

IFSM

2.0

1.0

A

Power Dissipation (Note 1)

Pd

350

mW

Thermal Resistance Junction to Ambient Air

(Note 1)

R

θJA

357

K/W

Operating and Storage Temperature Range

-65 to + 150

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

Reverse Breakdown Voltage (Note 3) IR=100uA

V(BR)

75

-

V

Forward Voltage

IF=1.0mA

IF= 10mA

IF = 50mA

IF=150mA

VF

0.55

0.67

0.75

-

0.70

0.82

1.10

1.25

V

Peak Reverse Current

VR=50V

VR=100V

VR=50V, TJ=125

℃

VR=20V

IR

-

1.0

3.0

100

25

uA

nA

Junction Capacitance

VR=0, f=1.0MHz

Cj

-

2.0

pF

Reverse Recovery Time (Note 2)

trr

-

4.0

nS

Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.

2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100

Ω.

3. Test Period < 3000uS.