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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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HMC608

GaAs PHEMT MEDIUM

POWER AMPLIFIER, 9.5 - 11.5 GHz

v01.0707

General Description

Features

Functional Diagram

The HMC608 is a high dynamic range GaAs PHEMT

MMIC Medium Power Amplifier chip. The amplifier

has two modes of operation: high gain mode (Vpd pin

shorted to ground); and low gain mode (Vpd pin left

open). The electrical specifications in the table below

are shown for the amplifier operating in high gain

mode. Operating from 9.5 to 11.5 GHz, the amplifier

provides 32 dB of gain, +27.5 dBm of saturated power

and 23% PAE from a +5.0 V supply voltage. Noise

figure is 5.5 dB while output IP3 is +33 dBm. The RF

I/Os are DC blocked and matched to 50 Ohms for

ease of use.

Output IP3: +33 dBm

Saturated Power: +27.5 dBm @ 23% PAE

Gain: 32 dB

Supply: +5V @ 310 mA

50 Ohm Matched Input/Output

2.1 x 1.2 x 0.1 mm Die Size

Typical Applications

The HMC608 is ideal for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Military End-Use

Parameter

Min.

Typ.

Max.

Units

Frequency Range

9.5 - 11.5

GHz

28

32

dB

Gain Variation Over Temperature

0.02

0.03

dB/ °C

Input Return Loss

12

dB

Output Return Loss

20

dB

Output Power for 1 dB Compression (P1dB)

23

27

dBm

Saturated Output Power (Psat)

27.5

dBm

Output Third Order Intercept (IP3)

33

dBm

Noise Figure

5.5

dB

310

350

mA

[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical.

[2] Vpd= ground for high gain mode, Vpd = open for low gain mode.

[3] In low gain mode, typical gain is 22 dB and typical current is 67 mA.