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HMC632LP5 Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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HMC632LP5 Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
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1 / 9 page ![]() 10 10 - 270 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC632LP5 / 632LP5E MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 14.25 - 15.65 GHz v00.0707 General Description Features Functional Diagram The HMC632LP5(E) is a GaAs InGaP Heterojunc- tion Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components. Dual Output: Fo = 14.25 - 15.65 GHz Fo/2 = 7.125 - 7.825 GHz Pout: +9 dBm Phase Noise: -107 dBc/Hz @100 kHz Typ. No External Resonator Needed QFN Leadless SMT Package, 25 mm2 Typical Applications The HMC632LP5(E) is ideal for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Electrical Specifications, T A = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V Parameter Min. Typ. Max. Units Frequency Range Fo Fo/2 14.25 - 15.65 7.125 - 7.825 GHz GHz Power Output RFOUT RFOUT/2 RFOUT/4 4 7 -8 12 13 -2 dBm dBm dBm SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT -107 dBc/Hz Tune Voltage Vtune 2 13 V Supply Current Icc(Dig) + Icc(Amp) + Icc(RF) 280 350 400 mA Tune Port Leakage Current (Vtune= 13V) 10 μA Output Return Loss 2dB Harmonics/Subharmonics 1/2 2nd 25 25 dBc dBc Pulling (into a 2.0:1 VSWR) 10 MHz pp Pushing @ Vtune= 5V 35 MHz/V Frequency Drift Rate 1.0 MHz/°C |
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