TIPP32 datasheet(2/6 Pages) POINN

2 / 6 page

TIPP32, TIPP32A,TIPP32B, TIPP32C

PNP SILICON POWER TRANSISTORS

MAY 1989 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC =

-5 mA

(see Note 4)

IB = 0

TIPP32

TIPP32A

TIPP32B

TIPP32C

-40

-60

-80

-100

ICES

Collector-emitter

cut-off current

VCE = -40 V

VCE = -60 V

VCE = -80 V

VCE = -100 V

VBE = 0

TIPP32

TIPP32A

TIPP32B

TIPP32C

-0.2

ICEO

Collector cut-off

current

VCE = -30 V

VCE = -60 V

IB = 0

TIPP32/32A

TIPP32B/32C

-0.3

IEBO

Emitter cut-off

current

VEB =

-5 V

IC = 0

-1

hFE

Forward current

transfer ratio

VCE =

-4 V

VCE =

-4 V

IC =

-1 A

IC =

-2 A

(see Notes 4 and 5)

VCE(sat)

Collector-emitter

saturation voltage

IB = -375 mA

IC =

-2 A

(see Notes 4 and 5)

-1

VBE

Base-emitter

voltage

VCE =

-4 V

IC =

-2 A

(see Notes 4 and 5)

-1.5

hfe

Small signal forward

current transfer ratio

VCE = -10 V

IC = -0.5 A

f = 1 kHz

fe|

Small signal forward

current transfer ratio

VCE = -10 V

IC = -0.5 A

f = 1 MHz

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