Nexperia

MMBZ33VC-T

Low capacitance unidirectional double ESD protection diode

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff

voltage

Tamb = 25 °C

-

-

26

V

VBR

breakdown voltage

IR = 1 mA; Tamb = 25 °C

31.3

33

34.7

V

IRM

reverse leakage current VR = 26 V; Tamb = 25 °C

-

1

50

nA

Cd

diode capacitance

f = 1 MHz; VR = 0 V; Tamb = 25 °C

-

20

25

pF

VCL

clamping voltage

IPPM = 2.8 A; tp = 8/20 µs; Tamb = 25 °C [1]

-

49

-

V

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5

006aab324

- VCL - VBR - VRWM

- IRM

- IR

- IPP

V

I

P-N

-

+

- IPPM

Fig. 3. V-I characteristics for a unidirectional ESD

protection diode

VR (V)

0

25

20

10

15

5

aaa-039102

10

15

5

20

25

Cd

(pF)

0

f = 1 MHz; Tamb= 25 °C

Fig. 4. Diode capacitance as a function of reverse

voltage; typical values

VCL (V)

0

80

60

20

40

aaa-039103

2

3

1

4

5

IPP

(A)

0

IEC 61000-4-5; tp = 8/20 μs; positive pulse

Fig. 5. Dynamic resistance with positive clamping; typical values

MMBZ33VC-T

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2024. All rights reserved

Product data sheet

8 November 2024

4 / 10