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RGP30M Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # RGP30M
Description  3.0 AMPS. Glass Passivated Junction Fast Recovery Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

RGP30M Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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RGP30A THRU RGP30M
3.0 AMPS. Glass Passivated Junction Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
3.0 Amperes
Features
High temperature metallurgically bonded constructed
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
3.0 ampere operation at TA=55
oC with no thermal runaway
Typical IR less than 0.2 uA
High temperature soldering guaranteed:
350
oC / 10 seconds, 0.375”(9.5mm) lead length, 5 lbs.,
(2.3kg) tension
Fast switching for high efficiency
Mechanical Data
Case: JEDEC DO-201AD molded plastic over glass body
Lead: Plated Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.048 ounce, 1.28 grams
DO-201AD
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol RGP
30A
RGP
30B
RGP
30D
RGP
30G
RGP
30J
RGP
30K
RGP
30M
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800 1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800 1000
V
Maximum Average Forward Rectified
Current .375” (9.5mm) Lead Length
@ TA = 55
℃
I(AV)
3.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
125
A
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
1.3
V
Maximum DC Reverse Current@ TA=25
℃
at Rated DC Blocking Voltage @TA=125
℃
IR
5.0
100
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
TJ=25
℃
Trr
150
250
500
nS
Typical Junction Capacitance ( Note 2 )
Cj
40
pF
Typical Thermal Resistance (Note 3)
R
θJA
30
℃/W
Operating & Storage Temperature Range
TJ , TSTG
-65 to + 175
℃
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A Recover to 0.25A.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.


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