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BAT46W Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAT46W Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 1 page ![]() - 23 - 0.053(1.35) Max. 0.006(0.15) Typ. Min. 0.010(0.25) Min. 0.004(0.10) Max. 0.067(1.70) 0.55(1.40) 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.112(2.85) 0.100(2.55) BAT46W Surface Mount Schottky Barrier Diode Voltage Range 100 Volts 200m Watts Power Dissipation Features High breakdown voltage Low turn-on voltage Guard ring construction for transient protection Mechanical Data Case: SOD-123, plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: Cathode band Marking: Date Code and Type Code or Date Code only Type Code: L6 Weight: 0.01 grams (approx.) SOD-123 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol BAT46W Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current Io 75 mA Forward Continuous Current (Note 1) IF 150 mA Repetitive Peak Forward Current (Note 1) @ tp < 1.0s, Duty Cycle < 50% IFRM 350 mA Forward Surge Current (Note 1) @ tp=10ms IFSM 750 mA Power Dissipation (Note 1) Pd 200 mW Operating and Storage Temperature Range TJ, TSTG -55 to + 125 OC Electrical Characteristics Type Number Symbol Min Typ Max Units Reverse Breakdown Voltage IR=100uA pulses V(BR) 100 _ _ V Reverse Leakage Current (Note 2) VR=1.5V VR=1.5V Tj=60 OC VR=10V VR=10V Tj=60 OC VR=50V VR=50V Tj=60 OC VR=75V VR=75V Tj=60 OC IR _ _ 0.5 5.0 0.8 7.5 2.0 15 5.0 20 uA Forward Voltage IF=0.1mA (Note 2) IF=10mA IF=250mA VF _ _ 0.25 0.45 1.00 V Junction Capacitance VR=0V, f=1.0MHz VR=1.0V, f=1.0MHz Cj _ 10 6.0 _ pF Thermal resistance, Junction to Ambient Air (Note1) R θJA _ _ 500 K/W Notes: 1. Valid Provided that Leads are Kept at Ambient Temperature. 2. Pulse Test: Pulse width = 300uS, Duty cycle ≦2%. |
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