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EGP10D Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # EGP10D
Description  1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

EGP10D Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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- 584 -
EGP10A THRU EGP10M
1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
Features
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature soldering guaranteed:
300
℃/10seconds, .375”(9.5mm) lead length at 5 lbs.,
(2.3kg) tension
Mechanical Data
Cases: JEDEC DO-41 molded plastic over glass
body
Lead: Plated axial leads, solderable per MIL-STD-
750, Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
DO-41
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol EGP
10A
EGP
10B
EGP
10D
EGP
10F
EGP
10G
EGP
10J
EGP
10K
EGP
10M
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100 200 300 400 600 800 1000
V
Maximum RMS Voltage
VRMS
35
70 140 210 280 420 560
700
V
Maximum DC Blocking Voltage
VDC
50
100 200 300 400 600 800 1000
V
Maximum Average Forward Rectified
Current .375” (9.5mm) Lead Length
@TA = 55
℃
I(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
30.0
A
Maximum Instantaneous Forward Voltage
@ 1.0A
VF
0.95
1.25
1.7
V
Maximum DC Reverse Current @ TA=25
℃
at Rated DC Blocking Voltage @ TA=125
℃
IR
5.0
100.0
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
TJ=25
℃
Trr
50
75
nS
Typical Junction Capacitance ( Note 2 )
Cj
20
15
pF
Typical Thermal Resistance (Note 3)
R
θJA
70
℃/W
Operating Temperature Range
TJ
-65 to + 150
℃
Storage Temperature Range
TSTG
-65 to + 150
℃
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.


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