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EGP30D Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # EGP30D
Description  3.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

EGP30D Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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EGP30A THRU EGP30K
3.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range
50 to 800 Volts
Current
3.0 Amperes
Features
Plastic material used carries Underwriters Laboratories
Classification 94V-O
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature metallurgically bonded construction
High temperature soldering guaranteed:
300
℃ / 10seconds, .375”(9.5mm) lead length at 5 lbs.,
(2.3kg) tension
Mechanical Data
Case: JEDEC DO-201 molded plastic over solid glass body
Lead: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.048 ounce, 1.28 gram
DO-201
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol EGP
30A
EGP
30B
EGP
30D
EGP
30F
EGP
30G
EGP
30J
EGP
30K
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
V
Maximum Average Forward Rectified Current
0.375”(9.5mm) Lead Length
@ TA = 55
℃
I(AV)
3.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
125
A
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
0.95
1.25
1.7
V
Maximum DC Reverse Current @ TA=25
℃
at Rated DC Blocking Voltage @ TA=125
℃
IR
5.0
100
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
TA=25
oC
Trr
50
75
nS
Typical Junction Capacitance ( Note 2 )
Cj
60
50
pF
Typical Thermal Resistance (Note 3)
R
θJA
40
℃/W
Operating and Storage Temperature Range
TJ TSTG
-65 to + 150
℃
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.


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