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FR104G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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FR104G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  Dimensions in inches and (millimeters) Version: A06 FR101G - FR107G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers DO-41 Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, Lead free., solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode end High temperature soldering guaranteed: 260 oC /10 seconds/.375”,(9.5mm) lead lengths at 5 lbs.,(2.3kg) tension Weight: 0.34 gram Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol FR 101G FR 102G FR 103G FR 104G FR 105G FR 106G FR 107G Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current .375”(9.5mm) Lead Length @TA = 75 oC I(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 30 A Maximum Instantaneous Forward Voltage @ 1.0A VF 1.3 V Maximum DC Reverse Current @ TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC IR 5.0 100 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 150 250 500 nS Typical Junction Capacitance ( Note 2 ) Cj 10 pF Typical Thermal Resistance RθJA 70 oC/W Operating Temperature Range TJ -65 to +150 oC Storage Temperature Range TSTG -65 to +150 oC Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B. |
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