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FRA1007G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # FRA1007G
Description  10 AMPS. Glass Passivated Fast Recovery Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

FRA1007G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  FRA1007G Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd FRA1007G Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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- 456 -
.412(10.5)
MAX
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.27(6.86)
.23(5.84)
.11(2.79)
.10(2.54)
.025(0.64)
.014(0.35)
.154(3.91)
.148(3.74)
DIA
PIN1
2
.113(2.87)
.103(2.62)
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.594(15.1)
.587(14.9)
.56(14.22)
.53(13.46)
PIN 1
PIN 2
Case Positive
CASE
FRA1001G THRU FRA1007G
10 AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
10 Amperes
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
℃/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
TO-220A
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol FRA
1001G
FRA
1002G
FRA
1003G
FRA
1004G
FRA
1005G
FRA
1006G
FRA
1007G
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
@TC = 55
I(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Maximum Instantaneous Forward Voltage @ 10A
VF
1.3
V
Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage @ TC=125
IR
5.0
100
uA
uA
Maximum Reverse Recovery Time ( Note 2 )
Trr
150
250
500
nS
Typical Junction Capacitance ( Note 1 ) TJ=25
Cj
100
pF
Typical Thermal Resistance (Note 3)
R
θJC
3.0
℃/W
Operating and Storage Temperature Range
TJ ,TSTG
-65 to +150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate


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