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SD103AW Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SD103AW Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() - 30 - 0.053(1.35) Max. 0.006(0.15) Typ. Min. 0.010(0.25) Min. 0.004(0.10) Max. 0.067(1.70) 0.55(1.40) 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.112(2.85) 0.100(2.55) SD103AW THRU SD103CW Schottky Barrier Switching Diode Voltage Range 20 to 40 Volts 400m Watts Power Dissipation Features Low forward voltage drop Guard ring construction for transient protection Negligible reverse recovery time Low reverse capacitance Mechanical Data Case: SOD-123, plastic Polarity: Cathode band Terminals: Solderable per MIIL-STD-202, Method 208 Marking: Date Code and Type Code or Date Code only Type Code: SD103AW S4 SD103BW S5 SD103CW S6 Weight: 0.01 grams (approx.) SOD-123 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol SD103AW SD103BW SD103CW Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 30 20 V RMS Reverse Voltage VR(RMS) 28 21 14 V Forward Continuous Current (Note 1) IFM 350 mA Non-repetitive Peak Forward Surge Current @ t ≦ 1.0s IFSM 1.5 A Power Dissipation (Note 1) Pd 400 mW Thermal Resistance Junction to Ambient Air (Note 1) R θJA 300 OC /W Operating and Storage Temperature Range TJ, TSTG -65 to + 125 OC Electrical Characteristics Type Number Symbol Min Typ Max Units Reverse Breakdown Voltage (Note 2) SD103AW IR=100uA SD103BW IR=100uA SD103CW IR=100uA V(BR) 40 30 20 - - V Peak Reverse Current SD103AW VR=30V SD103BW VR=20V SD103CW VR=10V IR - - 5.0 uA Forward Voltage Drop VF - - 0.37 0.60 V Junction Capacitance VR=0, f=1.0MHz Cj - 50 - Pf Reverse Recovery Time IF=IR=200mA Irr=0.1 x IR, RL=100 Ω trr - 10 - nS Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. Pulse Test: Pulse width = 300uS, Duty cycle ≦2%. |
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