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SF1002G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SF1002G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() - 272 - PIN 1 PIN 3 Positive CT PIN 2 CASE SF1001G THRU SF1008G 10.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 50 to 600 Volts Current 10.0 Amperes Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Terminals: Leads solderable per MIL-STD- 202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds .16”,(4.06mm) from case. Weight: 2.24 grams TO-220 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol SF 1001G SF 1002G SF 1003G SF 1004G SF 1005G SF 1006G SF 1007G SF 1008G Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @TC = 100 ℃ I(AV) 10.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 125 A Maximum Instantaneous Forward Voltage @ 5.0A VF 0.975 1.3 1.7 V Maximum DC Reverse Current @ TA=25 ℃at Rated DC Blocking Voltage @ TA=100 ℃ IR 10.0 400 uA uA Maximum Reverse Recovery Time (Note 1) Trr 35 nS Typical Junction Capacitance (Note 2) Cj 70 50 pF Typical Thermal Resistance (Note 3) R θJC 3.5 ℃/W Operating Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +150 ℃ Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-plate. |
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