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ESH1PC Datasheet(PDF) 1 Page - Vishay Siliconix |
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ESH1PC Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() Vishay General Semiconductor ESH1PB, ESH1PC & ESH1PD Document Number: 88895 Revision: 25-Jun-07 www.vishay.com 1 New Product High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Ultrafast recovery times for high frequency • Low forward voltage drop, low power loss • Low thermal resistance • Meets MSL level 1 per J-STD-020C, LF max peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for ultrafast switching speeds of ac-to-ac and dc-to-dc converters in high temperature conditions for both consumer and automotive applications. MECHANICAL DATA Case: DO-220AA (SMP) Epoxy meets UL-94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end DO-220AA (SMP) eSMPTM Series MAJOR RATINGS AND CHARACTERISTICS IF(AV) 1 A VRRM 100 V, 150 V, 200 V trr 25 ns VF 0.90 V Tj max. 175 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ESH1PB ESH1PC ESH1PD UNIT Device marking code PB PC PD Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum average forward rectified current (Fig. 1) IF(AV) 1.0 A Peak forward surge current 10 ms single half sine- wave superimposed on rated load IFSM 50 A Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Maximum instantaneous forward voltage (1) at IF = 0.7 A, Tj = 25 °C at IF = 1 A, Tj = 25 °C VF 0.86 0.90 V Maximum reverse current at rated VR (1) voltage Tj = 25 °C Tj = 125 °C IR 1.0 25 µA Maximum reverse current at VR = 20 V, Tj = 150 °C IR 50 µA |
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