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TS4148 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS4148 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  Dimensions in inches and (millimeters) - 608 - Version: B07 TS4148 0.5AMPS High Speed Switching Diode Item 1206 0805 L 0.135(3.40) 0.119(3.0) 0.088(2.20) 0.072(1.8) W 0.07(1.70) 0.054(1.30) 0.058(1.45) 0.042(1.05) T 0.038(0.95) 0.03(0.75) 0.038(0.95) 0.03(0.75) C 0.03(0.75) 0.014(0.35) 0.026(0.65) 0.01(0.25) Features For surface mounted application Low forward voltage drop High Current capability Fast switching for high efficiency High surge current capability Chip version in 1206 and 0805 High temperature soldering: 260oC / 10 secondsat terminals Mechanical Data Cases: 0805, 1206 Terminals: Pure tin plated lead free, Polarity: indicated by cathode arrow Packaging: 8 mm tape per EIA STD RS-481 Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol 0805 1206 Units Maximum Repetitive Peak Reverse Voltage VRRM 100 V Reverse Voltage VR 75 V Maximum Average Forward Rectified Current Resistive Load f>50Hz IF(AV) 150 mA 500 Peak Forward Surge Current 8.3 ms Half Sine-wave 1 uS IFSM 2.0 mA A Maximum Instantaneous Forward Voltage @100mA VF 1.0 V Maximum D.C. Reverse Current @ Tc=25 oC VR=20V at Rated DC Blocking Voltage @ Tc=125 oC VR=20V IR 25 50 nA uA Typical Reverse Recovery Time(Note 2) TJ=25 oC Trr 5.0 nS Typical Junction Capacitance (Note 1) Cj 1.65 1.60 pF Typical Thermal Resistance RθJA RθJC 190 80 150 60 oC/W Power Dissipation PD 500 mW Operating Junction Temperature Range TJ -65 to + 200 oC Storage Temperature Range TSTG -65 to + 200 oC Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Recover to 0.25A. |
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