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TS9007 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS9007 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 5 page ![]() TS9007 series 2-5 2006/02 rev. C Absolute Maximum Rating Supply Voltage Vin -0.3 ~ +7 V Input Supply Voltage (Recommended) Vopr +2 ~ +6 V Output Short-Circuit Duration Infinite Power Dissipation Pd 380 mW Thermal Resistance Өja 260 oC/W Junction Temperature Range Tj +150 oC Storage Temperature Range Tstg -65 ~ +150 oC Lead Soldering Temperature (260 oC) 5 S Caution : Stress above the listed absolute rating may cause permanent damage to the device . Electrical Characteristics Ta = 25 oC, Vin= (V OUT+1V), Cin=Cout=0.47uF, Ven=Vin, unless otherwise specified. Parameter Conditions Min Typ Max Unit Output Voltage Vin =Vo + 1V, IO=10mA -2.0 -- +2 % Output Current Limit Short-circuit output -- 200 -- mA Maximum Output Current Vin =Vo+1V, 300 -- -- mA Line Regulation Vin=(VOUT+1V) to 6V, IO=10mA -- 0.3 -- %/V Vin=Vo+1V, 1mA ≤IL≤300mA Vout ≥2.5V -- 0.2 1.0 Load Regulation Vin=Vo+1V, 1mA ≤IL≤200mA Vout<2.5V -- 0.2 1.0 % Io=300mA, Vout=Vo - 2% Vout ≥2.5V -- 500 600 Dropout Voltage Io=200mA, Vout=Vo - 2% Vout<2.5V -- 800 1000 mV Shutdown Supply Current EN=0V -- 0.01 -- uA Ground Pin Current Io=0mA -- 90 150 uA f=100Hz, Io=1mA -- 55 -- f=1KHz, Io=1mA -- 75 -- Ripple Rejection (PSRR) f=10kHz, Io=1mA -- 55 -- dB Io=10mA, f=10Hz to 100kHz, Bypass = 0nF -- 45 -- Output Noise Io=10mA, f=10Hz to 100kHz, Bypass = 30nF -- 15 -- uVrms Shutdown Exit Delay (note 2) RLOAD = 50Ω -- 45 300 uS EN Logic Low Level Vin=2.0V to 5.5V -- -- 0.4 EN Logic High Level Vin=2.0V to 5.5V 1.5 -- VIN V EN Input Bias Current Vin=2.0V to 5.5V -- -- -- uA Thermal Shutdown Shutdown Temperature -- 160 -- oC Thermal Shutdown Hysteresis -- 20 -- oC Note 1: The drop out voltage varies depending on output voltage selection Dropout is defined as Vin - Vout when Vout is 100mV below Vout where Vin = Vout+1V for nominal Vout Note 2: Time needed for Vout to reach 90% of final value |
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