TSM3443 datasheet(2/3 Pages) TSC

2 / 3 page

TSM3443 Preliminary

2-3

2006/02 rev. A

Electrical Characteristics

(Ta = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = - 250uA

BVDSS

-20

Drain-Source On-State Resistance

VGS = - 4.5V, ID = -4.7A

RDS(ON)

Drain-Source On-State Resistance

VGS = - 2.5V, ID = -1A

RDS(ON)

100

mΩ

Gate Threshold Voltage

VDS = VGS, ID = - 250uA

VGS(TH)

-0.6

-1.4

Zero Gate Voltage Drain Current

VDS = -20V, VGS = 0V

IDSS

-1.0

µA

Gate Body Leakage

VGS = ±12V, VDS = 0V

IGSS

±100

On-State Drain Current

VDS =-5V, VGS = -4.5V

ID(ON)

-15

Forward Transconductance

VDS = -10V, ID = - 4.7A

gfs

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

VDS = -10V, ID = -4.7A,

VGS = -4.5V

Qgd

1.9

Turn-On Delay Time

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD = -10V, RL = 10Ω,

ID = -1A, VGEN = - 4.5V,

RG = 6Ω

Input Capacitance

Ciss

640

Output Capacitance

Coss

180

Reverse Transfer Capacitance

VDS = -10V, VGS = 0V,

f = 1.0MHz

Crss

Source-Drain Diode

Max. Diode Forward Current

-1.3

Diode Forward Voltage

IS = -1.3A, VGS = 0V

VSD

-0.75

-1.2

Note : pulse test: pulse width <=300uS, duty cycle <=2%

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