Nexperia

BCW70

PNP general purpose transistors

aaa-028968

10-5

10

10-2

10-4

102

10-1

tp (s)

10-3

103

1

102

10

103

Zth(j-a)

(K/W)

1

duty cycle =

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

1

FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = -20 V; IE = 0 A; Tamb = 25 °C

-

-

-100

nA

ICBO

collector-base cut-off

current

VCB = -20 V; IE = 0 A; Tamb = 100 °C

-

-

-10

µA

IEBO

emitter-base cut-off

current

VEB = -5 V; IC = 0 A; Tamb = 25 °C

-

-

-100

nA

VCE = -5 V; IC = -10 µA; Tamb = 25 °C

-

150

-

hFE

DC current gain

VCE = -5 V; IC = -2 mA; Tamb = 25 °C

215

-

500

IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C

-

-80

-300

mV

VCEsat

collector-emitter

saturation voltage

IC = -50 mA; IB = -2.5 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-150

-

mV

IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C

-

-720

-

mV

VBEsat

base-emitter saturation

voltage

IC = -50 mA; IB = -2.5 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-810

-

mV

VBE

base-emitter voltage

VCE = -5 V; IC = -2 mA; Tamb = 25 °C

-600

-

-750

mV

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

4.5

-

pF

fT

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz;

Tamb = 25 °C

100

-

-

MHz

NF

noise figure

VCE = -5 V; IC = -200 µA; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz; Tamb = 25 °C

-

-

10

dB

BCW70

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Product data sheet

30 October 2024

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