TSLB257 datasheet(3/8 Pages) TAOS

3 / 8 page

TSLB257, TSLG257, TSLR257

HIGH-SENSITIVITY COLOR

LIGHT-TO-VOLTAGE CONVERTERS

TAOS027C − JUNE 2006

The

LUMENOLOGY

r Company

E 2006, TAOS Inc.

www.taosinc.com

Electrical Characteristics at VDD = 5 V, TA = 25°C, RL = 10 kΩ (unless otherwise noted) (see Notes

2 and 3)

PARAMETER

TEST CONDITIONS

TSLB257

TSLG257

TSLR257

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

Dark voltage

Ee = 0

Maximum output voltage

VDD = 4.5 V, No Load

4.49

VOM

Maximum out ut voltage

swing

VDD = 4.5 V, RL = 10 kΩ

4.2

Ee = 1.7 µW/cm2,

λp = 470 nm, Note 4

1.3

2.7

Output voltage

Ee = 1.6 µW/cm2,

λp = 524 nm, Note 5

1.3

2.7

Ee = 1.1 µW/cm2,

λp = 635 nm, Note 6

1.3

2.7

αVD

Temperature coefficient

of dark voltage (VD)

TA = 0°C to 70°C

−15

µV/°C

λp = 470 nm,

see Notes 4 and 7

1.18

0.35

0.09

Irradiance responsivity

λp = 524 nm,

see Notes 5 and 7

0.53

1.25

0.14

(

µW/

Irradiance responsivity

λp =565 nm,

see Notes 7 and 8

0.09

1.17

0.36

(

µW/

cm2)

λp = 635 nm,

see Notes 6 and 7

0.05

0.14

1.82

λp = 470 nm,

see Notes 4 and 7

1.57

0.47

0.12

Illuminance responsivity

λp = 524 nm,

see Notes 5 and 7

0.10

0.24

0.027

V/Ix

Illuminance responsivity

λp = 565 nm,

see Notes 7 and 8

0.015

0.20

0.06

V/Ix

λp = 635 nm,

see Notes 6 and 7

0.033

0.093

1.21

PSRR

Power supply rejection

fac = 100 Hz, see Note 10

ratio

fac = 1 kHz, see Note 10

IDD

Supply current

VO = 2 V (typical)

1.9

3.5

1.9

3.5

1.9

3.5

NOTES: 2. Measured with RL = 10 kΩ between output and ground.

3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.

4. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength

λp = 470 nm,

spectral halfwidth

∆λ½ = 35 nm, luminous efficacy = 75 lm/W.

5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength

λp = 524 nm,

spectral halfwidth

∆λ½ = 47 nm, luminous efficacy = 520 lm/W.

6. The input irradiance is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength

λp = 635 nm,

spectral halfwidth

∆λ½ = 17 nm, luminous efficacy = 150 lm/W.

7. Responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus Irradiance

Ee over this range will typically have a positive extrapolated VO value for Ee = 0.

8. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength

λp = 565 nm,

spectral halfwidth

∆λ½ = 28 nm, luminous efficacy = 595 lm/W.

9. Illuminance responsivity RV is calculated from the irradiance responsivity by using the LED luminous efficacy values stated in Notes

4, 5, 6, and 8, and using 1 lx = 1 lm/m2.

10. Power supply rejection ratio PSRR is defined as 20 log (

∆VDD(f)/∆VO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V.

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