Absolute Maximum Ratings1 T

A = 25°C unless otherwise stated

Rev 1.0

21/10/24

NPN Transistor Bare Die, 2N1893

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCER

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

7

V

Collector Current

IC

500

mA

Junction Temperature

TJ

150

°C

Storage Temperature

Tstg

-55 to 150

°C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

2

V(BR)CBO

IC = 100µA, IE = 0

120

-

-

V

Collector-Emitter Breakdown Voltage

V(BR)CER

IC = 10mA, RBE = 10Ω

100

-

-

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = 10mA, IB = 0

80

-

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = 100µA, IC = 0

7

-

-

V

Collector Cut-off Current

ICBO

VCB = 90V, IE = 0

-

-

0.01

µA

Emitter Cut-off Current

IEBO

VEB = 5V, IC = 0

-

-

0.01

µA

ON CHARACTERISTICS

VCE = 10V, IC = 0.1mA

20

-

-

-

VCE = 10V, IC = 10mA

35

-

-

-

Forward-Current Transfer Ratio

hFE

VCE = 10V, IC = 150mA

40

-

200

-

IC = 50mA, IB = 5 mA

-

-

1.2

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 150mA, IB = 15 mA

-

-

5

V

IC = 50mA, IB = 5mA

-

-

0.9

V

Base-Emitter Saturation Voltage

VBE(sat)

IC = 150mA, IB = 15mA

-

-

1.3

V

SMALL SIGNAL CHARACTERISTICS

3

Current Gain – Bandwidth Product

fT

VCE = 10V, IC = 50mA, f = 20MHz

50

-

-

MHz

Output Capacitance

Cobo

VCB = 10V, IE = 0, f = 100kHz

-

-

15

Input Capacitance

Cibo

VEB = 0.5V, IC = 0, f = 100kHz

-

-

85

pF

Small-Signal Current Gain

hfe

VCE = 5V, IC = 1mA, f = 1kHz

30

-

100

Electrical Characteristics T

A = 25°C unless otherwise stated

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. Pulse Test:

Pulse Width ≤ 300 µs, Duty Cycle ≤ 1% 3. Not production testing in die form, characterized by chip design and package verification

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