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ISB3025 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISB3025
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISB3025 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
ISB3025
DESCRIPTION
·
Excellent Safe Operating Area
·
High DC current Gain
APPLICATIONS
·
Designed for high power audio
·
disk head positioners
·
other linear applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.7
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
35
A
IB
Base Current-Continuous
5
A
PD
Total Power Dissipation @TC=25℃
250
W
Tj
Junction Temperature
-55~200
℃
Tstg
Storage Temperature
-55~200
℃


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