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7N65 Datasheet(PDF) 7 Page - Unisonic Technologies |
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7N65 Datasheet(HTML) 7 Page - Unisonic Technologies |
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7 / 8 page ![]() 7N65 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 7 of 8 www.unisonic.com.tw QW-R502-104,A TYPICAL CHARACTERISTICS(Cont.) 0 0 Drain Current, ID (A) 510 VGS=20V 0.5 1.0 2.0 2.5 On-Resistance Variation vs. Drain Current and Gate Voltage 1.5 15 20 25 Note: TJ=25℃ VGS=10V 1 0.1 0.2 Source-Drain Voltage, VSD (V) On State Current vs. Allowable Case Temperature 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 150℃ 25℃ Notes: 1. VGS=0V 2. 250µs Test 2000 0 0.1 Drain-SourceVoltage, VDS (V) 1600 400 110 Ciss 1200 800 Notes: 1. VGS=0V 2. f = 1MHz Ciss=Cgs+Cgd (Cds=shorted ) C oss=Cds+Cgd C rss=Cgd Capacitance Characteristics (Non-Repetitive) 0 Total Gate Charge, QG (nC) 10 30 50 8 10 12 20 6 4 2 0 VDS=130V VDS=520V VDS=325V 40 Gate Charge Characteristics Coss Crss 60 70 Note: ID=7A Notes : 1. θJC (t) = 0.88℃/W Max. 2. Duty Factor , D=t1/t2 3.TJM-TC=PDM×θJC (t) 1 0.1 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve |
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