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ADM40P03Z Datasheet(PDF) 2 Page - Advanced (Shenzhen) Electronics Co.,Ltd

Part # ADM40P03Z
Description  P-Channel Logic Level Enhancement Mode Field Effect Transistor
PDF  7 Pages
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Manufacturer  ADV [Advanced (Shenzhen) Electronics Co.,Ltd]
Direct Link  http://www.advsemi.com/en/
Logo ADV - Advanced (Shenzhen) Electronics Co.,Ltd

ADM40P03Z Datasheet(HTML) 2 Page - Advanced (Shenzhen) Electronics Co.,Ltd

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ADM40P03Z
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www.advsemi.com
Feb,2018 -Rev.1.01
ADV
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
On/off
Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=-250uA
-30
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= -27V, VGS=0V
TJ=25°C
--
--
-1
uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=-250uA
-1.0
-1.6
-2.5
V
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
--
--
±
100
nA
RDS(ON)
Drain-SourceOn-stateResistance⑵
VGS= -10V, IDS=-20A
--
7.5
10
m
VGS= -4.5V, IDS=-10A
--
11.6
16
Dynamic Characteristics
Ciss
Input Capacitance
VGS=0V,
VDS= -15V,
Frequency=1.0MHz
--
3564
--
pF
Coss
Output Capacitance
--
416
--
Crss
Reverse Transfer Capacitance
--
373
--
Switching Characteristics
td(ON)
Turn-on Delay Time⑴
VDD=-15V,
ID= -20A, VGS= -10V,
RGEN=2.5Ω
--
16
--
ns
tr
Turn-on Rise Time⑴
--
21
--
td(OFF)
Turn-off Delay Time⑴
--
68
--
tf
Turn-off Fall Time⑴
--
52
--
Qg
Total Gate Charge⑴
VDS=-15V, VGS= -10V,
IDS=-20A
--
37
--
nC
Qgs
Gate-Source Charge⑴
--
6.5
--
Qgd
Gate-Drain Charge⑴
--
9.4
--
Avalanche Characteristics
EAS
Single Pulse Avalanche Energy
（
3）
VDD=-15V,L=0.5mH ,VGS=1
0V,Rg=25Ω, VGS=-10V
121
--
--
mJ
Diode Characteristics
VSD
Diode Forward Voltage⑵
ISD=-30A, VGS=0V,TJ=25°C
--
-0.8
-1.2
V
NOTES:
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The Min. value is 100% EAS tested guarantee.



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