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STW12NK95Z Datasheet(PDF) 6 Page - STMicroelectronics |
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STW12NK95Z Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() Electrical characteristics STW12NK95Z 6/14 Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 10 A ISDM (1) Source-drain current (pulsed) 40 A VSD (2) Forward on voltage ISD=8.3A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10, di/dt = 100A/µs, VDD=50V, Tj=25°C 728 78 21.6 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10A, di/dt = 100A/µs, VDD=50V, Tj=150°C 964 11 23 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% |
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