ADM3103 datasheet(2/5 Pages) ADV

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ADM3103

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www.advsemi.com

Jul,2017 -Rev.1.01

ADV

Electrical Characteristics (TA=25°C Unless Otherwise Noted)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

On/off

Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250uA

-30

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS=0V

TJ=25°C

-1

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250uA

-1.2

-2.5

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

100

RDS(ON)

Drain-SourceOn-stateResistance⑵

VGS= -10V, IDS=-9A



VGS= -4.5V, IDS=-8A

Dynamic Characteristics

Ciss

Input Capacitance

VGS=0V,

VDS= -15V,

Frequency=1.0MHz

1650

Coss

Output Capacitance

330

Crss

Reverse Transfer Capacitance

220

Switching Characteristics

Total Gate Charge⑴

VDS=-25V, VGS= -10V,

IDS=8A

Qgs

Gate-Source Charge⑴

Qgd

Gate-Drain Charge⑴

Diode Characteristics

VSD

Diode Forward Voltage⑵

ISD =-1A, VGS = 0V ,TJ=25°C

-1.0

NOTES:

1. Surface Mounted on FR4 Board, t ≤ 10 sec.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

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