2N5401 datasheet(2/2 Pages) DIOTEC

2 / 2 page

2N5400 / 2N5401

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Emitter-Base-cutoff current – Emitter-Basis-Reststrom

- VEB = 3 V, (C open)

- IEBO

–

–-

50 nA

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

- IC = 10 mA, - IB = 1 mA

- IC = 50 mA, - IB = 5 mA

- VCEsat

–

0.2 V

0.5 V

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

- IC = 10 mA, - IB = 1 mA

- IC = 50 mA, - IB = 5 mA

- VBEsat

–

1.0 V

Gain-Bandwidth Product – Transitfrequenz

- VCE = 5 V, - IC = 10 mA, f = 50 MHz

100 MHz

–

400 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

––

6 pF

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 200 µA,

RS = 10 Ω, f = 1 kHz

2N5400

2N5401

–

8 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 200 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

2N5550 / 2N5551

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

http://www.diotec.com/

[%]

tot

120

100

[°C]

150

100

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

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