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IRF7314Q Datasheet(PDF) 2 Page - International Rectifier |
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IRF7314Q Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7314Q 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) Q p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -3.0A, VGS = 0V R trr Reverse Recovery Time ––– 44 66 ns TJ = 25°C, IF = -3.0A Qrr Reverse Recovery Charge ––– 54 81 nC di/dt = -100A/µs R Source-Drain Ratings and Characteristics ––– ––– ––– ––– -43 -3.0 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– VVGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.009 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.049 0.058 VGS = -4.5V, ID = -5.2A R ––– 0.082 0.098 VGS = -2.7V, ID = -4.42A R VGS(th) Gate Threshold Voltage -0.7 ––– ––– VVDS = VGS, ID = -250µA gfs Forward Transconductance 6.8 ––– ––– SVDS = 10V, ID = -5.2A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 19 29 ID = -5.2A Qgs Gate-to-Source Charge ––– 2.1 3.2 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– 9.3 14 VGS = -4.5V td(on) Turn-On Delay Time ––– 18 ––– VDD = -10V tr Rise Time ––– 26 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 41 ––– RG = 6.0Ω tf Fall Time ––– 38 ––– VGS = -4.5V R Ciss Input Capacitance ––– 913 ––– VGS = 0V Coss Output Capacitance ––– 512 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 260 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Notes: Q Repetitive rating; pulse width limited by max. junction temperature. R Starting T J = 25°C, L = 45mH RG = 25Ω, IAS = -5.2A. S Surface mounted on FR-4 board, t ≤ 10sec. T Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G |
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