ADB3115

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www.advsemi.com

Feb,2015 -Rev.3.01

ADV

Electrical Characteristics (TA=25°C Unless Otherwise Noted)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

On/off

Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250uA

-30

--

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS=0V

TJ=25°C

--

--

-1

uA

VDS=-24V,VGS=0V TJ=55°C

--

--

-5

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250uA

-1.2

-1.6

-2.5

V

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

--

--

±

100

nA

RDS(ON)

Drain-SourceOn-stateResistance⑵

VGS= -10V, IDS=-30A

--

7.3

8.7

m



VGS= -4.5V, IDS=-15A

--

11

13.5

Dynamic Characteristics

Ciss

Input Capacitance

VGS=0V,

VDS= -15V,

Frequency=1.0MHz

--

3448

--

pF

Coss

Output Capacitance

--

508

--

Crss

Reverse Transfer Capacitance

--

421

--

Switching Characteristics

td(ON)

Turn-on Delay Time⑴

VDD=-15V,

ID= -15A, VGS= -10V,

RGEN=3.3Ω

--

9.4

--

ns

tr

Turn-on Rise Time⑴

--

10.2

--

td(OFF)

Turn-off Delay Time⑴

--

117

--

tf

Turn-off Fall Time⑴

--

24

--

Qg

Total Gate Charge⑴

VDS=-15V, VGS= -4.5V,

IDS=-10A

--

30

--

nC

Qgs

Gate-Source Charge⑴

--

10

--

Qgd

Gate-Drain Charge⑴

--

10.4

--

Avalanche Characteristics

Diode Characteristics

VSD

Diode Forward Voltage⑵

ISD =-1A, VGS = 0V ,TJ=25°C

--

--

-1.0

V

NOTES:

1. Surface Mounted on FR4 Board, t ≤ 10 sec.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-50A