BC549 datasheet(2/2 Pages) DIOTEC

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BC546 ... BC549

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

VCE = 80 V, (B-E short)

VCE = 50 V, (B-E short)

VCE = 30 V, (B-E short)

BC546

BC547

BC548 / BC549

ICES

–

0.2 nA

15 nA

VCE = 80 V, Tj = 125°C, (B-E short)

VCE = 50 V, Tj = 125°C, (B-E short)

VCE = 30 V, Tj = 125°C, (B-E short)

BC546

BC547

BC548 / BC549

ICES

–

4 µA

Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg. 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

–

80 mV

200 mV

600 mV

Base saturation voltage – Basis-Sättigungsspannung 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

–

700 mV

900 mV

–

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

VCE = 5 V, IC = 2 mA

VCE = 5 V, IC = 10 mA

VBE

580 mV

–

660 mV

–

700 mV

720 mV

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

–

300 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

–

3.5 pF

6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEB0

–9 pF

–

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 µA, RG = 2 kΩ

f = 1 kHz, Δf = 200 Hz

BC546 / BC547

BC548 / BC549

–

2 dB

1.2 dB

10 dB

4 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 200 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC556 ... BC559

Available current gain groups per type

Lieferbare Stromverstärkungsgruppen pro Typ

BC546A

BC547A

BC548A

BC546B

BC547B

BC548B

BC549B

BC547C

BC548C

BC549C

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

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