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BC559 Datasheet(PDF) 2 Page - Diotec Semiconductor

Part # BC559
Description  General Purpose Si-Epitaxial PlanarTransistors
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC559 Datasheet(HTML) 2 Page - Diotec Semiconductor

  BC559 Datasheet HTML 1Page - Diotec Semiconductor BC559 Datasheet HTML 2Page - Diotec Semiconductor  
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BC556 ... BC559
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 80 V, (B-E short)
- VCE = 50 V, (B-E short)
- VCE = 30 V, (B-E short)
BC546
BC547
BC548 / BC549
- ICES
- ICES
- ICES
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
- VCE = 80 V, Tj = 125°C, (B-E short)
- VCE = 50 V, Tj = 125°C, (B-E short)
- VCE = 30 V, Tj = 125°C, (B-E short)
BC546
BC547
BC548 / BC549
- ICES
- ICES
- ICES
4 µA
4 µA
4 µA
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- VCEsat
- VCEsat
80 mV
250 mV
300 mV
650 mV
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- VBEsat
- VBEsat
700 mV
900 mV
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA
- VBE
- VBE
600 mV
660 mV
750 mV
800 mV
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
150 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
3.5 pF
6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
10 pF
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC556 ... BC558
BC559
F
F
2 dB
1 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC546 ... BC549
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC556A
BC557A
BC558A
BC556B
BC557B
BC558B
BC559B
BC557C
BC558C
BC559C
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG



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