 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRFSL52N15DPBF Datasheet(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRFSL52N15DPBF Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 12 page  2 www.irf.com PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 19 ––– ––– S VDS = 50V, ID = 36A Qg Total Gate Charge ––– 60 89 ID = 36A Qgs Gate-to-Source Charge ––– 18 27 nC VDS = 75V Qgd Gate-to-Drain ("Miller") Charge ––– 28 42 VGS = 10V, td(on) Turn-On Delay Time ––– 16 ––– VDD = 75V tr Rise Time ––– 47 ––– ID = 36A td(off) Turn-Off Delay Time ––– 28 ––– RG = 2.5Ω tf Fall Time ––– 25 ––– VGS = 10V Ciss Input Capacitance ––– 2770 ––– VGS = 0V Coss Output Capacitance ––– 590 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 3940 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 260 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 550 ––– VGS = 0V, VDS = 0V to 120V Dynamic @ TJ = 25°C (unless otherwise specified) ns S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V trr Reverse Recovery Time ––– 140 210 nS TJ = 25°C, IF = 36A Qrr Reverse RecoveryCharge ––– 780 1170 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 60 240 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.16 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 32 m Ω VGS = 10V, ID = 36A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy dh mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ VDS (Avalanche) Repetitive Avalanche Voltage V 200 ––– ––– 36 ––– ––– 450 ––– ––– Max. 470 Min. Typ. ––– ––– |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
